Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
Researchers reported progress on a quantum silicon-on-insulator (QSOI) substrate derived from a 28nm fully-depleted silicon-on-insulator platform, intended for 300mm CMOS-compatible fabrication of spin qubits. They fabricated quantum devices on both standard 28nm FD-SOI and the QSOI variant and compared them. The QSOI arrays showed highly uniform positioning of the first electron across qubit sites.
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What this could mean
- 0–2 yearsPlausible
If this uniformity persists across full 300mm wafers, it could allow silicon spin qubit arrays to be fabricated with consistent single-electron positions in commercial foundries within two years, reducing the need for per-device tuning.
Uniform first-electron placement addresses a key source of variability in quantum dot qubits; the use of an established 300mm FD-SOI process line gives a credible route to wafer-scale reproducibility. But it still depends on demonstrating that gate-defined quantum dots can be tuned uniformly and that charge noise remains low.
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